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2SK2890-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,0105 50A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 50 200 16 1441.5 50 150 -55 ~ +150 L=0.769mH,Vcc=12V Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V VGS=10V ID=100A RGS=10 Tch=25C L = 100H IF=50A VGS=0V Tch=25C IF=50A VGS=0V -dI/dt=100A/s Tch=25C Min. 30 1,0 Typ. 1,5 10 0,2 10 8,0 Max. 2,0 500 1,0 100 10,5 5,3 35 70 3900 2000 850 17 70 250 180 1,0 65 0,12 6,8 5850 3000 1280 30 110 380 270 1,5 50 Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 2,5 62,5 Unit C/W C/W N-channel MOS-FET 30V 0,0105 50A 50W 2SK2890-01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=50A; VGS=10V > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [m] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=100A; TC=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25C C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch Eas=f(starting Tch): VCC=12V; IAV 50A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance EAV [mJ] 10 ID [A] 12 Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 30V 0,0105 50A 2SK2890-01 FAP-IIIB Series Typical Switching Characteristics t=f(ID): VCC = 15V, VGS = 10V, RG = 10 50W > Characteristics t [ns] VSD [V] Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is subject to change without notice! |
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